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NCV7701 2.0 Amp H-Bridge Driver
This automotive grade H-Bridge driver provides a flexible means for controlling loads requiring bidirectional drive currents. Bridge outputs are protected from overcurrent at each switch and overtemperature shutdown provides product robustness. The NCV7701 inputs can be interfaced to a range of voltages, including vehicle battery voltage. The product features a low quiescent current mode, allowing unswitched connection to the power source. The NCV7701 is produced using ON Semiconductor's POWERSENSEt BCD technology.
Features
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SO-20L DW SUFFIX CASE 751D 1
20
* * * * * * * * * * * * * *
MARKING DIAGRAM
20 NCV7701 AWLYYWW 1 A WL, L YY, Y WW, W = Assembly Location = Wafer Lot = Year = Work Week
Forward, Reverse, Brake High, Brake Low Modes 1.0 A Output Current Capability (DC) Supply Voltage Range 7.0 V to 26 V 0.25 RDS(ON) per Driver @ 25C Sleep Mode (IQ < 10 A) Overvoltage Protection Thermal Protection Undervoltage Disable Function Short Circuit Protection Cross Conduction Protection Synchronous Low-Side Rectification for Lower Power Dissipation Diagnostic Output (Open Drain) TTL/CMOS/Pull-Up to Battery Compatible Inputs 20 Lead SO Package with 8 Internally Fused Leads
PIN CONNECTIONS
1 VBAT NC OUTB GND GND GND GND FAULT NC NC 20 NC NC OUTA GND GND GND GND EN IN1 IN2
Typical Applications
* DC Motors * Stepper Motors * Modulator Valves
ORDERING INFORMATION
Device NCV7701DW NCV7701DWR2 Package SO-20L SO-20L Shipping 37 Units/Rail 1000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2003
1
October, 2003 - Rev. 3
Publication Order Number: NCV7701/D
NCV7701
VBAT
EN
Voltage Reference
200 kHz Oscillator
Charge Pumps
ILIM
ILIM
M1 IN1 Bridge Control IN2
M3
Gate Drive
OUTB OUTA
M2 Fault Detection * TSD * OVSD * UVLO
M4
FAULT
Masking Timer ILIM ILIM
GND
Figure 1. Block Diagram
MAXIMUM RATINGS*
Rating Supply Voltage (DC) - VBAT (Note 1) Logic Input Voltage (DC) Junction Temperature Range Storage Temperature Range Peak Transient (1.0 ms rise time, 300 ms period, 31 V Load Dump @ VBAT = 14 V) (Note 1) ESD Susceptibility (Human Body Model) Package Thermal Resistance Junction-to-Case, RJC Junction-to-Ambient, RJA Lead Temperature Soldering: Reflow: (SMD styles only) (Note 2) Value -0.3 to 45 -0.3 to 12 -40 to 150 -65 to 150 45 2.0 9.0 55 230 peak Unit V V C C V kV C/W C/W C
*The maximum package power dissipation must be observed. 1. External reverse-battery and transient voltage suppression (TVS) required. 2. 60 second maximum above 183C.
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NCV7701
ELECTRICAL CHARACTERISTICS (7.0 V VBAT 26 V, -40C TJ 125C; unless otherwise specified.) Note 3.
Characteristic General VBAT Quiescent Current: Low Quiescent Normal Operation EN Logic Input Low Level Input Voltage High Level Input Voltage Input Bias Current Input Leakage Current IN1, IN2, Logic Inputs Low Level Input Voltage High Level Input Voltage Input Bias Current Input Leakage Current IC Protection Overvoltage Shutdown Overvoltage Hysteresis Undervoltage Voltage Lockout Undervoltage Hysteresis Thermal Shutdown Thermal Hysteresis Drivers OUTA, OUTB Output High Voltage (VH) Output Low Voltage (VL) Current Limit FAULT Output Output Leakage Current Output Low Voltage AC Characteristics Output Turn-On Delay Output Turn-Off Delay Current Limit Mask Time - - - - - 20 5.0 5.0 40 10 10 60 s s s VFAULT = 5.0 V, Fault Absent IFAULT = 0.5 mA, Fault Present - - - - 10 1.0 A V VBAT = 14 V, ISOURCE = 1.0 A, VH = VBAT - OUTX VBAT = 14 V, ISOURCE = 1.0 A, VL = OUTX - VGND VBAT = 14 V - - 3.0 0.4 0.4 4.0 0.75 0.75 5.0 V V A (Guaranteed by Design) (Guaranteed by Design) - - - - 27 0.2 - 100 160 10 32 0.5 - 200 185 22.5 37 1.0 6.5 400 210 35 V V V mV C C - - 5.0 V on Logic Input, EN = 5.0 V 0 V on Logic Input, EN = 0 V - 2.0 5.0 - - - 20 - 0.8 - 40 1.0 V V A A EN = 5.0 V EN = 0 V - - - 2.5 15 - - - 50 - 0.7 - 100 1.0 V V A A EN = 0 V, VBAT 12.8 V 2.5 V EN VBAT, VBAT = 14 V - - - - 10 8.0 A mA Test Conditions Min Typ Max Unit
3. Designed to meet these characteristics over the stated voltage and temperature ranges, though may not be 100% parametrically tested in production.
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NCV7701
Table 1. H-Bridge Mode Control
EN 0 1 1 1 1 IN1 X 0 0 1 1 IN2 X 0 1 0 1 H-Bridge Off (Sleep Mode) Brake Low Forward Reverse Brake High OUTA Off Low High Low High OUTB Off Low Low High High
Table 2. Fault Diagnostics
Fault Condition No Faults Undervoltage Overvoltage Thermal Shutdown Current Limit Fault Pin High Z Low Low Low Low H-Bridge Normal Operation Off Off Off 1 or more Drivers in Current Limit
PACKAGE PIN DESCRIPTION
Pin No. 1 2, 9, 10, 19, 20 3 4, 5, 6, 7, 14, 15, 16, 17 8 11 12 13 18 Symbol VBAT NC OUTB GND FAULT IN2 IN1 EN OUTA IC supply voltage. No connection. Bridge output. Power ground. Diagnostic output. Mode control input. Mode control input. Chip enable. Bridge output. Description
Operating Description During power up, the outputs are HI-Z regardless of the input states. When the undervoltage lockout threshold is exceeded, the outputs will reflect the input states. Outputs change to HI-Z whenever an undervoltage, overvoltage or thermal shutdown fault is detected. Normal operation will resume when faults are resolved. Overcurrent Protection Current is monitored continuously in each switch of each half bridge when the ENA input is in a high state thus protecting each switch from faults due to short to GND, short to VBAT or shorted load conditions. Only the affected
half-bridge is disabled for short to VBAT or short to GND faults. A mask timer is initiated after a fault is detected and prevents recognition of an overcurrent event until the mask time expires. Persistence of an overcurrent condition causes the bridge output to change to HI-Z and the FAULT output to latch low until the next transition occurs on either the input related to the faulted output or the ENA input is brought low then high again. This method of protection provides current limiting on a cycle-by-cycle basis and helps allow a stall torque current to be ignored during motor start. Continued overcurrent may eventually result in activation of the thermal shutdown circuitry, thus activating a second level of protection for the NCV7701.
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NCV7701
VIGN
1
20
VBAT
+
NC NC OUTA GND NCV7701 GND GND GND EN IN1 IN2
TVS
47 F
NC OUTB GND GND GND GND FAULT NC NC
Controller
VCC
Figure 2. Application Diagram
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NCV7701
PACKAGE DIMENSIONS
SO-20L DW SUFFIX CASE 751D-05 ISSUE F
D
A
11 X 45 _
q
NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_
H
M
B
M
20
10X
0.25
E
1
10
20X
B 0.25
M
B TA
S
B
S
A
SEATING PLANE
h
18X
e
A1
T
C
POWERSENSE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
L
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NCV7701/D

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